Amplify your sensors using our graphene barristor platform technology
The on-off ratio of GFET current is extremely small compared to conventional semiconductors. The transistor itself is also not an ideal structure for monitoring changes in channel resistance.
The barristor on-off ratio reaches up to 1,000,000, similar to silicon. The device structure is also optimal in monitoring changes in channel resistance.
✓ On-chip amplification
✓ Overcomes GFET limitations
A barristor (triode device) is a new type of graphene-based transistor with a Schottky barrier between graphene and silicon. The current modulation is amplified more than 10,000 times compared to graphene field-effect transistors (GFETs)
GFET based sensors have a low response (~5%) and ambipolarity, causing the sensor signal to either increase or decrease during detection. Thus, a complex algorithm is required for detection
Barristor-based sensors amplify sensor signals by 100 times (~500%) without ambipolarity. Thus, a simple algorithm is sufficient: measuring current increase
Versarien Graphene Limited
Units 1A-D Longhope Business Park, Monmouth Road, Longhope, Gloucestershire, GL17 0QZ, United Kingdom
Copyright © 2024 Versarien - All Rights Reserved